26 August 1997 Laser pulse correcting 2D Pearson-IV ion-implanted impurity profiles near the oxidal defense mask boundary for creating matrix CdHgTe infrared detector
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997); doi: 10.1117/12.280415
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
We proposed a new physical model and results of numerical calculations. According to this model, 2D concentrations of ion-implanted impurity profiles with initial distribution Pearson-IV's type under pulse laser influence. Exclusive character of this model was connected with registration action not only concentration gradient but also internal thermodiffusional stress, thermoelectric fields and parallel calculation of evolution temperature-coordinate field dependence in CdHgTe crystal with taking to account temperature dependencies of thermoconductivity and density of material. Using numerical implicit method for solving set of nonlinear nonstationary differential equations we investigated processes of side diffusion of ion-implanted in CdHgTe impurity near edge of defense mask.
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Liubomyr S. Monastyrskii, Yu. Sokyrka, O. Ivanel, Igor B. Olenych, Roman M. Kovtun, "Laser pulse correcting 2D Pearson-IV ion-implanted impurity profiles near the oxidal defense mask boundary for creating matrix CdHgTe infrared detector", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280415; https://doi.org/10.1117/12.280415
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KEYWORDS
Defense and security

Pulsed laser operation

Infrared detectors

Crystals

Differential equations

Diffusion

Nonlinear crystals

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