Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors

Aleksander V. Voitsekhovskii; V. N. Davydov; Sergey N. Nesmelov

doi:10.1117/12.280442

26 August 1997 Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors

Aleksander V. Voitsekhovskii, V. N. Davydov, Sergey N. Nesmelov

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280442
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

Influence of a weak magnetic field on photo-electric, electrophysical characteristics of MIS - structures is experimentally investigated.Long-term changes of a spectrum of surface states of Si-SiO₂-structures, caused by a magnetic field are considered. It is supposed that the reason of a long-term relaxation in Si-SiO₂ - structures are a diffusion and reactions of nonequilibrium defects, arising at relaxations of polarization of nuclear spin system, in InSb, InAs the diffusion passes on mechanism of transfer of defect of a type 'broken off connection'.

Citation Download Citation

Aleksander V. Voitsekhovskii, V. N. Davydov, and Sergey N. Nesmelov "Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280442

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