26 August 1997 Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280469
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
A new type of step quantum well IR detectors with electron Bragg reflectors in the barrier regions has be proposed. The Bragg reflector is consisted of special square well and help to form the highly localized quasibound states in the extended states above the barrier height. Using the transfer matrix method, the complex eigen-energies, corresponding eigen-wavefunctions, and oscillator strengths was calculated. Theoretical analyses indicate that this kind of structure has great facility to realize bicolor optical transitions and transport asymmetry of photocurrent.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhenghao Chen, Zhenghao Chen, Zhenyu Yuan, Zhenyu Yuan, Jianwei Ma, Jianwei Ma, Dafu Cui, Dafu Cui, } "Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280469; https://doi.org/10.1117/12.280469
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