26 August 1997 Performance of HgCdTe, InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280406
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
The ability to hybridize various detector arrays in disparate technologies to an assortment of state-of-the-art silicon readouts has enabled direct comparison of key IR detector technologies including photovoltaic (PV) HgCdTe/Al2O3, PV HgCdTe/CdZnTe, PV InGaAs/InP, and the photoconductive (PC) GaAs/AlGaAs quantum well IR photodetector (QWIP). The staring focal plane arrays range in size from 64 X 64 to 1024 X 1024; we compare these IR detector technologies versus operating temperature and background flux via hybrid FPA test at operating temperatures from 32.5 K to room temperature and photon backgrounds from mid-105 to approximately equals 1017 photons/cm2-s. Several state-of-the-art IR FPAs are included: a 1.7 micrometers 128 X 128 InGaAs hybrid FPA with room temperature D of 1.5 X 1013 cm-Hz1/2/W and 195K D of 1.1 X 1015 cm-Hz1/2/W; a 3.2 micrometers 1024 X 1024 FPA for surveillance; a 4.6 micrometers 256 X 256 HgCdTe/Al2O3 FPA for imaging with BLIP NE(Delta) T of 2.8 mK at 95K; and a 9 micrometers 128 X 128 GaAs QWIP with 32.5 K D > 1014 cm-Hz1/2/W at 32.5K and 8 X 1010 cm-Hz1/2W at 62K.
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Lester J. Kozlowski, Lester J. Kozlowski, Kadri Vural, Kadri Vural, Jose M. Arias, Jose M. Arias, William E. Tennant, William E. Tennant, Roger E. DeWames, Roger E. DeWames, } "Performance of HgCdTe, InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280406; https://doi.org/10.1117/12.280406
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