26 August 1997 Photoconductivity of a semiconductor with transverse gradient of electric field
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280426
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
The kinetics of photoconductivity and the spectral photosensitivity of a semiconductor with anisotropic electroconductivity in nonhomogeneous electric field has been investigated. Photoconductivity of germanium samples of ringlike geometry was studied experimentally and theoretically. The main results are: decay of the photocurrent in a semiconductor in the presence of the transverse gradient of electric field differs form the exponential one and depends on mutual directions of the gradient and the drift of the carriers; a photodetector with parameters reversibly controlled by electric and magnetic fields is possible. It was found that spectral photosensitivity is of either selective or bolometric type depending on mutual directions of incident light, the gradient of electric field, and of drift of carriers.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arthur Medvids, Arthur Medvids, } "Photoconductivity of a semiconductor with transverse gradient of electric field", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280426; https://doi.org/10.1117/12.280426
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