26 August 1997 Quantum magnetotransport in 2D electron gas in InGaAs/InP heterostructures
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280461
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Quantum magnetotransport measurements were performed on liquid phase epitaxially grown In0.35Ga0.47As/InP heterostructures at 4.2 K temperature in magnetic fields up to 22 Tesla. Measurements in tilted magnetic field, in conjunction with the analysis of the derivatives with respect to the magnetic field of the magnetoresistance curves, allowed the resolution of spin-splitting of the Landau levels up to N equals 3. The spin-splitting energy ESPIN was deduced for the half-filled Landau levels 0$ARDN, 1$ARUP, 1$ARDN, 2$ARUP, and 2$ARDN. The magnetic field dependence of the spin-splitting energy was interpreted using a simple model based on the exchange interaction of the electrons in the spin-splitted Landau levels, incorporating the disorder induced broadening of the Landau levels.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Balint Podor, Balint Podor, I. G. Savel'ev, I. G. Savel'ev, Gy. Kovacs, Gy. Kovacs, G. Remenyi, G. Remenyi, G. Gombos, G. Gombos, A. M. Kreshchuk, A. M. Kreshchuk, S. V. Novikov, S. V. Novikov, } "Quantum magnetotransport in 2D electron gas in InGaAs/InP heterostructures", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280461; https://doi.org/10.1117/12.280461
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