Paper
26 August 1997 Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China
Junhao Chu, Kun Liu, Young Chang, Pulin Liu, Biao Li, Shaoling Guo, Minghui Chen, Dingyuan Tang
Author Affiliations +
Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280439
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe(MCT) material undoped and doped with Sb, As, Fe have been investigated recently in our laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements and other contactless nd nondestructive methods such as the IR, far-IR and millimeter wave measurements. This paper reports a portion of these new results.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junhao Chu, Kun Liu, Young Chang, Pulin Liu, Biao Li, Shaoling Guo, Minghui Chen, and Dingyuan Tang "Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280439
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KEYWORDS
Infrared radiation

Mercury cadmium telluride

Physics

Antimony

Capacitance

Iron

Luminescence

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