Sensitivity of two-dimensional electron gas to far infrared radiation

Alexander I. Dmitriev; George V. Lashkarev; Z. D. Kovalyuk

doi:10.1117/12.280421

26 August 1997 Sensitivity of two-dimensional electron gas to far infrared radiation

Alexander I. Dmitriev, George V. Lashkarev, Z. D. Kovalyuk

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280421
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

The strong photoeffect was discovered experimentally in specially doped InSe crystals at temperature 4.2 K as a result of laser radiation action at fixed wave-lengths of 337 and 195 microns.Also some of the kinetic, galvanomagnetic and optical anomalies had been observed. They are explained by appearance of the gap E in the conduction band continuum of degenerated 2D semiconductor in charge density waves state. The long wave threshold of photocurrent was found to depend strongly on a magnitude of electric current through the crystal. A rough estimation gives a value dE/dJ approximately 0.4 meV/mA. We had carried out experiments in order to study instabilities of InSe electrical properties in temperature range 4.2 approximately 300 K by quasi stationary conditions. Abrupt electrical resistivity increases about 5 times were observed by us at temperatures 5, 10, 14, 27, 31, 170 and 200 K. The frequency dispersion of conductivity for high frequencies were observed.

Citation Download Citation

Alexander I. Dmitriev, George V. Lashkarev, and Z. D. Kovalyuk "Sensitivity of two-dimensional electron gas to far infrared radiation", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280421

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