26 August 1997 Si-Te acoustooptic modulator for fiber optic gas sensor based on midwave InGaAsSb/InAsSbP diode laser
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280407
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Modulator base don the amorphous Si-Te acousto-optic cell and operating in the mid-IR region has been manufactured and tested using 3.3 micrometers diode laser based on InGaAsSb/InAsSbP double heterostructure. Amplitude modulation efficiency for the laser beam coming from the end of a As2S3 fiber appeared to be not less than 70 percent, allowing to use the cell in optical gas sensor applications.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. A. Kulakova, Nonna V. Zotova, Sergey A. Karandashev, Boris A. Matveev, B. T. Melekh, Nikolai M. Stus', Georgii N. Talalakin, E. Z. Yakhkind, "Si-Te acoustooptic modulator for fiber optic gas sensor based on midwave InGaAsSb/InAsSbP diode laser", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280407; https://doi.org/10.1117/12.280407
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