Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors

Valerii G. Voevodin; Olga Viktorovna Voevodina

doi:10.1117/12.280457

26 August 1997 Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors

Valerii G. Voevodin, Olga Viktorovna Voevodina

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280457
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

Fourteen A²B⁴C₂⁵- and A¹B³C₂⁶-compounds with chalcopyrite-type crystal structure are under investigation. The process of formation of a sole ternary compound form chemical elements is dealt with. Design-based model anticipates adiabatic conditions. Characteristics of the self-propagating high-temperature synthesis such as adiabatic combustion temperature, initial temperature of synthesis process, share of liquid phase in combustion product are calculated.

Citation Download Citation

Valerii G. Voevodin and Olga Viktorovna Voevodina "Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280457

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