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26 August 1997 Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280457
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Fourteen A2B4C25- and A1B3C26-compounds with chalcopyrite-type crystal structure are under investigation. The process of formation of a sole ternary compound form chemical elements is dealt with. Design-based model anticipates adiabatic conditions. Characteristics of the self-propagating high-temperature synthesis such as adiabatic combustion temperature, initial temperature of synthesis process, share of liquid phase in combustion product are calculated.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valerii G. Voevodin and Olga Viktorovna Voevodina "Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280457
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