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26 August 1997 p-to-n ion-beam milling conversion in specially doped CdxHg1-xTe
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280463
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Ion beam milling effect on electrical properties of usual vacancy doped and especially In compensated p-CdxHg1-xTe has been investigated. In all cases after ion beam milling by low energy neutralized. Ar ions n-p structure with thickness of n-layers that depended on initial hole concentration and irradiation dose has been created. It was shown that in the usual vacancy doped CdxHg1-xTe the electron concentration in n-layers well agrees with concentration of residual donors. For the especially doped samples the electron concentration was determined by the In donor impurities' concentration. The possibility of the n-p+ CdxHg1-xTe photodiode fabrication with optimum required carriers' concentration both in n- and p-regions has been demonstrated by ion beam milling of the especially doped samples.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor I. Izhnin, Aleksandr I. Izhnin, K. R. Kurbanov, and Bogdan B. Prytuljak "p-to-n ion-beam milling conversion in specially doped CdxHg1-xTe", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280463
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