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14 August 1997 Direct patterning of electrodeposited polythiophene thin films by ultraviolet laser ablation
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Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280552
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
Abstract
In this paper, we report a simple direct-write patterning process for the conjugated polymer polythiophene based on ultraviolet laser ablation. The polythiophene films were prepared by electrochemical polymerization. A custom built dual function lithography system based on a 325nm CW He-Cd laser was used for patterning the films. Ablation was observed for an incident power density of 286kWcm-2. Grooves with widths in the range of 2-3 micrometers have been fabricated. This process does not involve resist masks and any wet development step. The insolubility of polythiophene suggests that it can be used as a positive self-developing resist. Alternatively, the ablated patterns can be sued directly as device structures. The present process may have applications in polymer electronic devices and micromachining.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiao Hu, Terence Kin Shun Wong, S. Gao, H. M. Liu, Yee Loy Lam, Yuen Chuen Chan, and Feng-Lan Xu "Direct patterning of electrodeposited polythiophene thin films by ultraviolet laser ablation", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280552
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