14 August 1997 Enhanced poly gate critical dimension control by using a SiOxNy ARC film
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Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280548
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
Abstract
In this study, a silicon oxy-nitride (SiOxNy) film deposited using the plasma enhanced chemical vapor deposition method has been developed and applied to improve poly-gate level resist line CD control. The desired optical properties of a SiOxNy anti-reflective coating (ARC) film and its optimum thickness were targeted by using a photolithography simulator. A process matrix study has led to the identification of an optimized SiOxNy film Dielectric ARC deposition process for i-line photolithography applications. Using the optimized SiOxNy film as the ARC, significant improvements, compared to the standard and top ARC techniques, have been achieved, including 5 times reduction in does to clear swing ratio and complete elimination of reflection induced photoresist notching and necking effects. Moreover, a 2500 wafer marathon run demonstrated that the refractive index, extinction coefficient and thickness of this film can be controlled to +/- 0.04, +/- 0.03 and +/- 12A, respectively and that the particle performance is excellent.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Bencher, Christopher Bencher, Tony Chu, Tony Chu, Way Tat Tan, Way Tat Tan, Gang Zou, Gang Zou, Qunying Lin, Qunying Lin, Xu Yi, Xu Yi, Wang Xu Dong, Wang Xu Dong, Ma Wei Wen, Ma Wei Wen, } "Enhanced poly gate critical dimension control by using a SiOxNy ARC film", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280548; https://doi.org/10.1117/12.280548
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