14 August 1997 Implementation of organic bottom antireflective coating in 0.35-um polycide fabrication
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Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280541
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
In the development of i-line 0.35 micrometers technology, the reflection from the poly-Si substrates become so severe that notching was observed in al the areas with larger than 2000 angstrom topological difference during the lithographical masking. As a result, microtrenches and poor electrical characteristics were obtained after etching. By applying 1520 angstrom of organic bottom anti-reflective coating, the reflection from the substrates was greatly reduced from 50 percent to less than 5 percent. Consequently, the design rules developed for i-line 0.35 micrometers technology could be preserved without microtrench formation. The organic BARC also provided additional advantages of planarizing the different topological features on the substrates. And, its etching rate was about the same as the photoresists. The exposure energy and usable depth of focus latitudes were slightly improved with the application of organic BARC. There were basically no differences in masking linearity and iso-dense bias when comparing the critical dimensions of the photoresists with or without applying the organic BARC. The experimental data agreed with the computer simulation data very well. Furthermore, good and were acceptable to the manufacturing environment. Defect density induced by the additional step of coating the organic BARC was very low. Therefore, the implementation of organic BARC was relatively simple and was essential to reduce the notching produced by substrate reflection in the critical layers of the 0.35 micrometers devices.
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Tze-Man Ko, Tze-Man Ko, Ming Hui Fan, Ming Hui Fan, Alex Cheng, Alex Cheng, Raymond Yu, Raymond Yu, } "Implementation of organic bottom antireflective coating in 0.35-um polycide fabrication", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280541; https://doi.org/10.1117/12.280541

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