Measurements and analysis of beam current and beam diameter of an electron-beam lithography system

Wu Lu; Geok Ing Ng; Soon Fatt Yoon; Hao-Ying Shen

doi:10.1117/12.280537

14 August 1997 Measurements and analysis of beam current and beam diameter of an electron-beam lithography system

Wu Lu, Geok Ing Ng, Soon Fatt Yoon, Hao-Ying Shen

Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280537
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

An accurate method to measure beam current (BC) and beam diameter (BD) of an electron beam lithography by using a Faraday cup and a sharp edge is described. The sharp edge specimen was fabricated by an isotropic process in < 100 > silicon wafer which yielded a high etch rate ratio and gave exceptionally smooth etched faces. The saw-tooth of the edge was less than 30 nm. Detailed investigations about the measured BS and BD at various conditions showed that BC and the square of BD were linear with an offset, which was the sum of optical aberrations, noise, and edge width.

Citation Download Citation

Wu Lu, Geok Ing Ng, Soon Fatt Yoon, and Hao-Ying Shen "Measurements and analysis of beam current and beam diameter of an electron-beam lithography system", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280537

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