14 August 1997 Profile characteristics and simulation of chemically amplified resists in electron-beam lithography
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Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280536
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
Abstract
We use the highly sensitive chemically amplified resist to obtain the high resolution and sensitivity in deep sub- micron region. We analyze the edge profiles and performances of resist by using the Electron-beam Lithography simulator (ELIS) and experiments. We mainly characterize the trend of resist profiles to measure the variation of wall angle, sensitivity, contrast, and solubility. In the simulation, development model for CAR is optimized to express the developed profiles of highly sensitive resist with high solubility and to have a good agreement with resist profiles in the electron beam lithography. From our results, we understand that resist edge profile depends on the solubility, sensitivity, and contrast of resist in the developer and got the high resolution to 0.15 micrometers line and space patterns using Leica EBMF 10.5 Gaussian beam. Finally, the ELIS simulator is useful in optimizing the deep sub- micron process.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young-Mog Ham, Young-Mog Ham, Changbuhm Lee, Changbuhm Lee, Soo-Hwan Kim, Soo-Hwan Kim, KukJin Chun, KukJin Chun, } "Profile characteristics and simulation of chemically amplified resists in electron-beam lithography", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280536; https://doi.org/10.1117/12.280536
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