14 August 1997 Resolution and depth of focus in optical lithography
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Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280550
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
Abstract
Common uses of the terms 'resolution' and 'depth of focus' (DOF) are explored as they relate to semiconductor lithography. A definition of DOF is given which is most appropriate to photolithography for IC manufacturing. Examples of the use of the definition for DOF for studying trends in lithography are given. Resolution is then defined based on realistic requirements for semiconductor manufacturing. Using this definition of resolution, the common scaling law of resolution with numerical aperture is shown to be inaccurate under typical conditions.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Mack, Chris A. Mack, } "Resolution and depth of focus in optical lithography", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280550; https://doi.org/10.1117/12.280550
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