Paper
14 August 1997 X-ray holography for VLSI using synthetic bilevel holograms
Ronald E. Burge, Joachim N. Knauer, XiaoCong Yuan, Keith Powell
Author Affiliations +
Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280549
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
Abstract
The gains are pointed out of the potential replacement of the usual patterned transmission x-ray mask, in consideration of high-resolution proximity lithography for VLSI, by a diffraction element, or bilevel in-line hologram, to be projected under near-field conditions using synchrotron radiation. The hologram can be configured to correct for diffraction blurring due to projection, and be designed for pre-determined gaps between mask and wafer. The adjustment of experimental parameters can account for the waveguide effects that arise from mask elements with small features which are several hundred x-ray wavelengths thick.It is shown that the hologram, for projection printing at the 50nm feature size, at mask to wafer gaps of 10micrometers or greater, can be fabricated in a similar fashion to a high-resolution mask. The calculation of the hologram is computationally intensive, but a database of calculated features is envisaged.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ronald E. Burge, Joachim N. Knauer, XiaoCong Yuan, and Keith Powell "X-ray holography for VLSI using synthetic bilevel holograms", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280549
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Holograms

Photomasks

X-rays

Very large scale integration

Holography

Diffraction

Semiconducting wafers

Back to Top