18 August 1997 Field electron emission from highly graphitic diamond films
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Proceedings Volume 3184, Microelectronic Packaging and Laser Processing; (1997) https://doi.org/10.1117/12.280578
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
Abstract
The diamond films were prepared by a microwave chemical vapor deposition system. The molybdenum substrates were used. The x-ray diffraction spectra of the films contain peaks of the (111) and (220) facets of diamond. Scanning electron microscope and optical mecrograph reveal that the films consist of ball-like carbon structure, and diamond grains embedded on the balls. Raman spectra and surface resistance measurement also indicate that the films are highly graphitic diamond films. The field emitter was made of the diamond-ball like carbon film cathode and ITO anode. The transparent conducting anode technique was used to measure the 1-V curves and the emission sites. The measurements were operated in a vacuum system with a base pressure of 10-4 torr. The turn-on field of 10 V/micrometers was obtained. After Ar+ ion impacting the highly graphitic diamond film cathode, the turn-on field was increased dramatically to 22 V/micrometers . The good quality diamond film emitter was also reported.
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Binglin Zhang, Binglin Zhang, Ning Yao, Ning Yao, Yunjun Li, Yunjun Li, Jintian He, Jintian He, Xiaoping Wang, Xiaoping Wang, } "Field electron emission from highly graphitic diamond films", Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); doi: 10.1117/12.280578; https://doi.org/10.1117/12.280578
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