18 August 1997 Scribing of ITO coatings using a Q-switched Nd:YAG laser
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Proceedings Volume 3184, Microelectronic Packaging and Laser Processing; (1997) https://doi.org/10.1117/12.280572
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
This paper describes the result of optimizing three process variable to achieve a narrow line width in laser engraving of ITO conductive coatings using the Taguchi technique of experimental design. The laser used is a NEC Q-switched continuous wave Nd:YAG laser operating at a wavelength of 1.064 micrometers . The three process variables explored are: Q- switch frequency, speed of X-Y stage, and attenuator ratio of laser power. The various parameters were assigned to an L9 orthogonal array. The experiments were conducted with two repetitions each of which employs complete randomization. It was found that a narrow line width could be achieved with a Q-switch frequency of 25 kHz, scribing speed of 2000 mm/min, and beam attenuator setting of 35. A confirmation experiment was carried out and the results fell within the predicted 95 percent confidence interval.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Siu Chung Tam, Siu Chung Tam, Yihong Chen, Yihong Chen, HongYu Zheng, HongYu Zheng, W. L. Chen, W. L. Chen, } "Scribing of ITO coatings using a Q-switched Nd:YAG laser", Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); doi: 10.1117/12.280572; https://doi.org/10.1117/12.280572


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