14 August 1997 Broad-area semiconductor lasers with modulated reflectivity of the mirrors
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Proceedings Volume 3186, Laser Technology V: Physics and Research and Development Trends; (1997); doi: 10.1117/12.280514
Event: Laser Technology V, 1996, Szczecin, Poland
Abstract
We provide results of the theoretical analysis of guided lateral mode in broad-area (BA) semiconductor lasers with modal reflectors formed by patterning the reflectivity of the front facet. The analysis has been performed by using a simple model based on the effective index method and the concept of the effective facet reflectivity. The numerical results include mode threshold conditions and far-field patterns of the lasing modes for various reflector configurations.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michal Szymanski, Jacek Marek Kubica, Pawel Szczepanski, Bohdan Mroziewicz, "Broad-area semiconductor lasers with modulated reflectivity of the mirrors", Proc. SPIE 3186, Laser Technology V: Physics and Research and Development Trends, (14 August 1997); doi: 10.1117/12.280514; http://dx.doi.org/10.1117/12.280514
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KEYWORDS
Reflectivity

Semiconductor lasers

Mirrors

Modulation

Reflectors

Optical lithography

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