GRIN SCH SQW AlGaAs/GaAs lasers grown by molecular beam epitaxy: modeling and operating characteristics

Maciej Bugajski; Maria Kaniewska; Kazimierz Reginski; Andrzej Malag; Slawomir Lepkowski; Jan Muszalski

doi:10.1117/12.280512

14 August 1997 GRIN SCH SQW AlGaAs/GaAs lasers grown by molecular beam epitaxy: modeling and operating characteristics

Maciej Bugajski, Maria Kaniewska, Kazimierz Reginski, Andrzej Malag, Slawomir Lepkowski, Jan Muszalski

Proceedings Volume 3186, Laser Technology V: Physics and Research and Development Trends; (1997) https://doi.org/10.1117/12.280512
Event: Laser Technology V, 1996, Szczecin, Poland

Abstract

We present comprehensive numerical modeling of graded-index separate-confinement-heterostructure single-quantum well (GRIN SCH SQW) lasers. In particular, we present for the first time a modified drift-diffusion model of the laser, which correctly takes into account quantum nature of carriers in the active region. The drift-diffusion equations are solved self- consistently together with Schrodinger and Poisson equation. The analysis is carried out for the general case of MQW active region. We employ our model to predict the behavior of the devices fabricated by molecular beam epitaxy (MBE) technique. The broad contact, test lasers produced in our laboratory exhibited threshold current density J_th equals 350 A/cm², intrinsic mode loses as low as 7 cm^-1 and internal quantum efficiency near unity. External quantum efficiency above 80% was achieved. The emitted power per uncoated facet just before degradation was equal to 5 W for pulsed operation with 0.1% filing factor and 140 mW for cw operation. We also discuss the development of the technology in terms of growth temperature and V/III beam fluxes ratio optimization.

Citation Download Citation

Maciej Bugajski, Maria Kaniewska, Kazimierz Reginski, Andrzej Malag, Slawomir Lepkowski, and Jan Muszalski "GRIN SCH SQW AlGaAs/GaAs lasers grown by molecular beam epitaxy: modeling and operating characteristics", Proc. SPIE 3186, Laser Technology V: Physics and Research and Development Trends, (14 August 1997); https://doi.org/10.1117/12.280512

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available