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14 August 1997 GRIN SCH SQW AlGaAs/GaAs lasers grown by molecular beam epitaxy: modeling and operating characteristics
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We present comprehensive numerical modeling of graded-index separate-confinement-heterostructure single-quantum well (GRIN SCH SQW) lasers. In particular, we present for the first time a modified drift-diffusion model of the laser, which correctly takes into account quantum nature of carriers in the active region. The drift-diffusion equations are solved self- consistently together with Schrodinger and Poisson equation. The analysis is carried out for the general case of MQW active region. We employ our model to predict the behavior of the devices fabricated by molecular beam epitaxy (MBE) technique. The broad contact, test lasers produced in our laboratory exhibited threshold current density Jth equals 350 A/cm2, intrinsic mode loses as low as 7 cm-1 and internal quantum efficiency near unity. External quantum efficiency above 80% was achieved. The emitted power per uncoated facet just before degradation was equal to 5 W for pulsed operation with 0.1% filing factor and 140 mW for cw operation. We also discuss the development of the technology in terms of growth temperature and V/III beam fluxes ratio optimization.
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Maciej Bugajski, Maria Kaniewska, Kazimierz Reginski, Andrzej Malag, Slawomir Lepkowski, and Jan Muszalski "GRIN SCH SQW AlGaAs/GaAs lasers grown by molecular beam epitaxy: modeling and operating characteristics", Proc. SPIE 3186, Laser Technology V: Physics and Research and Development Trends, (14 August 1997);


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