Infrared photodetectors based on narrow-gap AIIIBV semiconductor materials grown by LP-MOCVD

Grachik H. Avetisyan; Vladimir B. Kulikov; Vitalij P. Kotov; Igor Dmitrievich Zalevsky; Peter V. Bulaev; Anatoliy A. Padalitsa; Vladimir Alekseevic Gorbylev

doi:10.1117/12.284739

11 August 1997 Infrared photodetectors based on narrow-gap A^IIIB^V semiconductor materials grown by LP-MOCVD

Grachik H. Avetisyan, Vladimir B. Kulikov, Vitalij P. Kotov, Igor Dmitrievich Zalevsky, Peter V. Bulaev, Anatoliy A. Padalitsa, Vladimir Alekseevic Gorbylev

Author Affiliations +

Proceedings Volume 3200, Third Conference on Photonic Systems for Ecological Monitoring; (1997) https://doi.org/10.1117/12.284739
Event: Third Conference on Photonic Systems for Ecological Monitoring, 1996, Prague, Czech Republic

Abstract

Low Pressure Metalorganic Chemical Vapor Deposition (LP MOCVD) epitaxial growth of InAs_0.85Sb_0.15 p-i-n structures for infrared photodetectors arrays is reported. Monocrystalline epitaxial layers of InAsSb were grown on semi-insulating GaAs wafers. Method of variable composition superlattice buffer layer epitaxial growth to overcome difficulties of large lattice mismatch (up to 14%) between InAsSb and GaAs was introduced. For the first time growth of wide-gap AlSb dielectric layer was realized. Using of AlSb layer in p-i-n structure makes possible to decrease photodetector dark current considerably. Absorption and photosensitivity spectra of grown p-i-n heterostructures were investigated. Photodetectors fabricated from such structures operate in photovoltaic mode. Photoresponsivity of test photodetectors was 1 A/W at the wavelength 4.5 mkm.

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Grachik H. Avetisyan, Vladimir B. Kulikov, Vitalij P. Kotov, Igor Dmitrievich Zalevsky, Peter V. Bulaev, Anatoliy A. Padalitsa, and Vladimir Alekseevic Gorbylev "Infrared photodetectors based on narrow-gap A^IIIB^V semiconductor materials grown by LP-MOCVD", Proc. SPIE 3200, Third Conference on Photonic Systems for Ecological Monitoring, (11 August 1997); https://doi.org/10.1117/12.284739

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