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2 January 1998 Source wavelength dependence of modulation frequency responses of 1.55-um DFB LDs measured with active layer photomixing technique
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Proceedings Volume 3211, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96; (1998) https://doi.org/10.1117/12.345360
Event: International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96, 1996, Madras, India
Abstract
With the active layer photomixing technique, parasitic-free intrinsic modulation frequency responses of semiconductor laser diodes (LD's) can be measured. But the mechanism of the carrier density modulation, and consequently, the region where the carrier density is modulated, depends on the wavelengths of the injected beams. In this paper, the modulation frequency response of a 1.55 µ m distributed feedback LD has been measured with the active layer photomixing technique under two distinct conditions; one is the case when the carrier density is modulated by the band-band absorption, and the other by the stimulated emission. The measured modulation frequency responses are quite different from each other. Especially, the response at the relaxation oscillation frequency in the band-band absorption case is suppressed about 1 OdB compared with that in the stimulated emission one.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryosuke Goto, Ken-ichi Matsui, Masakazu Mori, Toshio Goto, and Akira Miyauchi "Source wavelength dependence of modulation frequency responses of 1.55-um DFB LDs measured with active layer photomixing technique", Proc. SPIE 3211, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96, (2 January 1998); https://doi.org/10.1117/12.345360
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