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Surface preparation, growth, and characterization of ultrathin gate oxides for scaled CMOS applications
Shallow source/drain extension formation using antimony and indium pre-amorphization schemes for 0.18- to 0.13-μm CMOS technologies
Impact of photoresist taper and implant tilt angle on the interwell isolation of subquarter-micron CMOS technologies
Characterization of polymer formation during SiO2 etching with different fluorocarbon gases (CHF3, CF4, C4F8)