0.18-um gate length CMOS devices with N+ polycide gate for 2.5-V application

Jeong Yeol Choi; Eric Zhang; Chung Chyung Han

doi:10.1117/12.284595

27 August 1997 0.18-μm gate length CMOS devices with N⁺ polycide gate for 2.5-V application

Jeong Yeol Choi, Eric Zhang, Chung Chyung Han

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284595
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Single N+ polycide gate CMOS process has been scaled to the sub-0.2 micrometer gate-length regime. Estimated worst-case hot-carrier effect was 7% degradation in N-IDSAT for 10 years of continuous operation at 2.8 V. Being a buried channel device, P-MOSFETs presents a trade-off between VT adjustment and CD margin. It was manifested by the gate-to-drain overlap which increases as VT becomes less negative with more channel implant doses. We found that the relationship between gate-to- drain overlap and PMOS VT was almost independent of the n-well doping and source/drain junction depth. This indicates that the buried channel of P-MOSFETs acts as an extension to the source/drain. For VT equals 0.5 V, gate-to-drain overlap was 0.04 micrometer, and the n-well doping was twice of p-well doping for the same gate length, in order to account for the shorter effective channel length.

Citation Download Citation

Jeong Yeol Choi, Eric Zhang, and Chung Chyung Han "0.18-μm gate length CMOS devices with N⁺ polycide gate for 2.5-V application", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284595

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