Advantages of SOI technology in low-voltage ULSIs

Makoto Yoshimi; Shigeru Kawanaka; Takashi Yamada; Mamoru Terauchi; Tomoaki Shino; Toshiaki Fuse; Yukito Oowaki; Shigeyoshi Watanabe

doi:10.1117/12.284591

27 August 1997 Advantages of SOI technology in low-voltage ULSIs

Makoto Yoshimi, Shigeru Kawanaka, Takashi Yamada, Mamoru Terauchi, Tomoaki Shino, Toshiaki Fuse, Yukito Oowaki, Shigeyoshi Watanabe

Author Affiliations +

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284591
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Low power advantage of SOI (silicon-on-insulator) technology is presented. A 0.5 V operation ALU is demonstrated by employing a gate-to-body connected structure. From the viewpoint of reliability in process integration, origin of a leakage current between source and drain is investigated in detail. The performance advantage of fabricated SOI ALUs over bulk devices as well as issues to be overcome are discussed.

Citation Download Citation

Makoto Yoshimi, Shigeru Kawanaka, Takashi Yamada, Mamoru Terauchi, Tomoaki Shino, Toshiaki Fuse, Yukito Oowaki, and Shigeyoshi Watanabe "Advantages of SOI technology in low-voltage ULSIs", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284591

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