27 August 1997 Advantages of SOI technology in low-voltage ULSIs
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Abstract
Low power advantage of SOI (silicon-on-insulator) technology is presented. A 0.5 V operation ALU is demonstrated by employing a gate-to-body connected structure. From the viewpoint of reliability in process integration, origin of a leakage current between source and drain is investigated in detail. The performance advantage of fabricated SOI ALUs over bulk devices as well as issues to be overcome are discussed.
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Makoto Yoshimi, Shigeru Kawanaka, Takashi Yamada, Mamoru Terauchi, Tomoaki Shino, Toshiaki Fuse, Yukito Oowaki, Shigeyoshi Watanabe, "Advantages of SOI technology in low-voltage ULSIs", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284591; https://doi.org/10.1117/12.284591
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