27 August 1997 Advantages of SOI technology in low-voltage ULSIs
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Low power advantage of SOI (silicon-on-insulator) technology is presented. A 0.5 V operation ALU is demonstrated by employing a gate-to-body connected structure. From the viewpoint of reliability in process integration, origin of a leakage current between source and drain is investigated in detail. The performance advantage of fabricated SOI ALUs over bulk devices as well as issues to be overcome are discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Yoshimi, Makoto Yoshimi, Shigeru Kawanaka, Shigeru Kawanaka, Takashi Yamada, Takashi Yamada, Mamoru Terauchi, Mamoru Terauchi, Tomoaki Shino, Tomoaki Shino, Toshiaki Fuse, Toshiaki Fuse, Yukito Oowaki, Yukito Oowaki, Shigeyoshi Watanabe, Shigeyoshi Watanabe, } "Advantages of SOI technology in low-voltage ULSIs", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284591; https://doi.org/10.1117/12.284591

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