Translator Disclaimer
Paper
27 August 1997 Applications of silicon-germanium-carbon in MOS and bipolar transistors
Author Affiliations +
Abstract
This paper will review growth of Si-Ge and Si-Ge-C alloys using various low thermal budget epitaxial schemes such as UHVCVD, RTPCVD and MBE. The growth issues, materials aspects and bandgap and strain engineering in these alloys will be discussed. The prospective of using these alloys in strained-channel Si-Ge MOSFETs and MODFETs in order to enhance CMOS in the giga-scale era will be discussed. We will also describe the use of these films in Si-Ge HBTs for high speed r-f type applications.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sanjay K. Banerjee "Applications of silicon-germanium-carbon in MOS and bipolar transistors", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284583
PROCEEDINGS
11 PAGES


SHARE
Advertisement
Advertisement
Back to Top