27 August 1997 Narrow-channel transistor threshold self-adjustment technique for ULSI with LOCOS isolation
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Abstract
A method for the compensation of the narrow-width effect of local oxidation and the self-adjustment of the narrow-channel transistor threshold voltage is proposed. The method enables the significant improvement of the device characteristics and isolation performance.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Konstantin V. Loiko, Igor V. Peidous, Hok-Min Ho, John F. Bromley-Barratt, Elgin T. Quek, David Hsuan Yu Lim, "Narrow-channel transistor threshold self-adjustment technique for ULSI with LOCOS isolation", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284615; https://doi.org/10.1117/12.284615
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