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27 August 1997 Nitrogen implantation: reverse short channel effects improvement and its drawbacks
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Abstract
In this paper, the effects of implanting nitrogen ions (N+) into the channel and source/drain/poly-silicon gate (poly-Si) regions on transistor characteristics are investigated. It was found that the use of N+ implantation into the channel reduces the reverse short channel effects (RSCE) tremendously. However, threshold voltage shifts of both n-ch an p-ch devices were observed. The thinning of the field oxide due to the extra N+ implantation was also seen. We attribute these threshold voltage shifts to the partial activation of the implanted nitrogen ions. When N+ were implanted into the source/drain/poly-Si regions, it was found that the roll-off of the n-ch devices and p+/n-well junction leakage current was degraded. We propose that these are due to the thinning of the field oxide at the bird's beak and to the partial activation of the implanted N+. It was found that there was no degradation in the n+/p-well junction leakage current which is consistent with the proposed mechanism.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teck Koon Lee, Yiang Aun Nga, Po-Ching Liu, Chock Hing Gan, and Yunqiang Zhang "Nitrogen implantation: reverse short channel effects improvement and its drawbacks", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284605; https://doi.org/10.1117/12.284605
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