27 August 1997 Potential of rf Si-MOS LSI technology
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Abstract
This paper reviews and discusses a potential of Si-MOS rf technology, focusing on the fundamental rf characteristics, such as f(tau ), fmax, noise, and linearity, also identical rf circuits, such as low noise amplifier, mixer, and oscillator.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Matsuzawa, Akira Matsuzawa, } "Potential of rf Si-MOS LSI technology", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284580; https://doi.org/10.1117/12.284580
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