27 August 1997 Process optimization of dual-gate CMOS
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Abstract
In this paper, we study and compare dual-gate CMOS devices fabricated with various processes such as standard or NO- nitrided gate oxides, polycrystalline or amorphous silicon gates, boron or BF2 implantation for p+-poly and S/D formation, and different drive-in conditions. It is found that NO nitridation of gate oxides can improve device performance for short channel PMOSFETs over control SiO2. However, pile-up of boron in nitrided gate oxides may degrade gate oxide reliability in PMOS devices. Amorphous silicon gates can effectively prevent boron penetration into gate oxides at a cost of aggravated poly-depletion effects. When BF2 implantation is used for p+-poly formation, fluorine improves the resistance of SiO2/Si interfaces to hot-carrier stress but it enhances boron diffusion in gate oxides. The process optimization of dual-gate CMOS regarding device performance and hot-carrier reliability is systematically studied.
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I. Min Liu, I. Min Liu, Yuh Yue Chen, Yuh Yue Chen, Chris Connor, Chris Connor, Atul B. Joshi, Atul B. Joshi, Dim-Lee Kwong, Dim-Lee Kwong, } "Process optimization of dual-gate CMOS", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284621; https://doi.org/10.1117/12.284621
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