Scaling self-aligned contacts for 0.25-um and below

Asanga H. Perera; Jim R. Pfiester; Tom Lii; Chris Feng; Mousumi Bhat; Thuy Dao; John Molloy; Michael Blackwell; Joe Cecil

doi:10.1117/12.284590

27 August 1997 Scaling self-aligned contacts for 0.25-μm and below

Asanga H. Perera, Jim R. Pfiester, Tom Lii, Chris Feng, Mousumi Bhat, Thuy Dao, John Molloy, Michael Blackwell, Joe Cecil

Author Affiliations +

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284590
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Self-aligned contacts (SAC) have been successfully scaled down to 0.2 tm, for high speed SRAM fabrication at the 64Mb density level. All factors affecting SAC contact resistance (Re) are investigated in depth to reduce the overall resistance of SACs. For a 0.25x0.45 im2 poly/n contact a contact resistance of 65 (1 =8 has been obtained. The factors which allow SACs to enable fabrication technologies at and below the 0.25 im size scale, are discussed.

Citation Download Citation

Asanga H. Perera, Jim R. Pfiester, Tom Lii, Chris Feng, Mousumi Bhat, Thuy Dao, John Molloy, Michael Blackwell, and Joe Cecil "Scaling self-aligned contacts for 0.25-μm and below", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284590

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