27 August 1997 Scaling self-aligned contacts for 0.25-μm and below
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Self-aligned contacts (SAC) have been successfully scaled down to 0.2 tm, for high speed SRAM fabrication at the 64Mb density level. All factors affecting SAC contact resistance (Re) are investigated in depth to reduce the overall resistance of SACs. For a 0.25x0.45 im2 poly/n contact a contact resistance of 65 (1 =8 has been obtained. The factors which allow SACs to enable fabrication technologies at and below the 0.25 im size scale, are discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Asanga H. Perera, Asanga H. Perera, Jim R. Pfiester, Jim R. Pfiester, Tom Lii, Tom Lii, Chris Feng, Chris Feng, Mousumi Bhat, Mousumi Bhat, Thuy Dao, Thuy Dao, John Molloy, John Molloy, Michael Blackwell, Michael Blackwell, Joe Cecil, Joe Cecil, "Scaling self-aligned contacts for 0.25-μm and below", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284590; https://doi.org/10.1117/12.284590

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