Thin-film integration for nanoscale and high-frequency electronics on Si

Joy Laskar; Nan Marie Jokerst; N. Evers; C. Chun

doi:10.1117/12.284581

27 August 1997 Thin-film integration for nanoscale and high-frequency electronics on Si

Joy Laskar, Nan Marie Jokerst, N. Evers, C. Chun

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284581
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

The continued emergence of wireless applications as perhaps the most financially significant market in recent years, wireless technology has become a global core competency. The demand for increasingly higher rates of data transmission, low-power operation and high frequency operation will eventually require integration of nanoscale electronics into available silicon technologies. A broad application base is expected for co-integrated resonant tunneling/CMOS technology (termed QMOS for quantum metal oxide semiconductor) because of the expected factor of 5 to 10 increase in functional density and speed when compared to conventional all-CMOS high speed circuit approaches. These circuits are realized by integrating compound semiconductor resonant tunneling diodes and three terminal high frequency components with conventional CMOS circuitry through the use of thin-film integration processes. The focus of this work is to develop reliable, densely packed nanoelectronic interfaces to bring higher functionality to Si systems. We combine: (1) high performance, resonant tunneling electronics; (2) high frequency, wireless electronics; and (3) conventional CMOS electronics into a single wafer level integrated system.

Citation Download Citation

Joy Laskar, Nan Marie Jokerst, N. Evers, and C. Chun "Thin-film integration for nanoscale and high-frequency electronics on Si", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284581

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