25 August 1997 Alkali metal ion monitoring and reduction in dielectric oxides
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Abstract
Alkali contamination in dielectric oxides has been a critical issue during the shrinking of integrated circuit devices. Identification and monitoring of ionic contamination is typically done with secondary ion mass spectrometry (SIMS). Improvements in the sampling procedure and analysis of the SIMS data was accomplished during this study. The identification of tools, processes, or materials that cause the ionic contamination and the resultant corrective actions to effectively lower the contamination in the circuit was done, and an improvement of over 3 orders of magnitude was accomplished. An ionic contamination reduction technique that can be done following an analysis of mobile ion concentration and location on, or within, the dielectric oxide films is discussed. Characterization of the clean process parameters that contributes to contamination removal was done, as well as particle and defectivity reduction by process and equipment optimization.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karl E. Mautz, Karl E. Mautz, "Alkali metal ion monitoring and reduction in dielectric oxides", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284640; https://doi.org/10.1117/12.284640
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