25 August 1997 Comparison of best process focus and machine focus
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The focus window of various topographies and substrate (borophosphosilicategass, plasma enhanced oxide and Al/Si/Cu) is discussed in this paper. Also the electric test data and Cp yield with different focus are introduced. Finally, the usable depth of focus, auto focus system and simulation model are applied to describe the difference between machine and process best focus.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi-Chuan Lo, Yi-Chuan Lo, Chih-Hsiung Lee, Chih-Hsiung Lee, Yang-Tung Fan, Yang-Tung Fan, Chih-Kung Chang, Chih-Kung Chang, Kuo-Liang Lu, Kuo-Liang Lu, } "Comparison of best process focus and machine focus", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284644; https://doi.org/10.1117/12.284644

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