25 August 1997 Development and characterization of multilevel metal interconnection etch process
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Abstract
A more robust chlorine chemistry based reactive ion etch (RIE) process was developed, characterized and optimized to anisotropically etch the interconnecting metal layers for use in the fabrication of CMOS and BiCMOS IC devices, using the Lam 4600 single wafer etcher. The titanium nitride and titanium silicide buried layer, used in the metal 1 structure, present unique constraints on etch selectivity to the underlying film. The process must clear metal stringers with minimal lateral etching of the aluminum during the tiN/Ti etch and overetch steps. The new optimized process meets all requirements imposed by advanced technologies, such as vertical metal sidewalls, wide process latitude, tight CD control, minimal of TEOS oxide underlayer, less sensitivity to photoresist pattern, excellent reliability and reproducibility, and lower level of polymer (reaction by- product) build-up in reactor chamber which could lead to metal corrosion and cluster defects.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kim Dang, Kim Dang, } "Development and characterization of multilevel metal interconnection etch process", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284625; https://doi.org/10.1117/12.284625
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