Electrical characterization of FSG low K dielectric deposition in HDP and PECVD tools

Gennadi Bersuker; Michael J. Shapiro; James Werking; Sang U. Kim

doi:10.1117/12.284639

25 August 1997 Electrical characterization of FSG low K dielectric deposition in HDP and PECVD tools

Gennadi Bersuker, Michael J. Shapiro, James Werking, Sang U. Kim

Proceedings Volume 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III; (1997) https://doi.org/10.1117/12.284639
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Results on electrical characterization of test structures with fluorosilicate glass (FSG) deposited in four different chemical vapor deposition (CVD) tools are reported. Data demonstrate high sensitivity of the electrical properties of FSG to metal pattern density. Both dielectric constant and leakage current are shown to be critical parameters for evaluation of dielectric performance.

Citation Download Citation

Gennadi Bersuker, Michael J. Shapiro, James Werking, and Sang U. Kim "Electrical characterization of FSG low K dielectric deposition in HDP and PECVD tools", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); https://doi.org/10.1117/12.284639

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