25 August 1997 High-pressure investigations of conducting materials
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Abstract
The diamond-plungers apparatus for simultaneous measurements of resistance (rho) , thermoelectric power S, volume V of samples is described. The apparatus contains the microcontroller for the operation by the measurements and keeping the experimental data. The examples, comprised S, (rho) , V recording for semiconductors Ge, Si and HgTeS in pressure range 0 - 30 GPa are represented.
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Vladimir V. Shchennikov, Andrew Yu. Derevskov, Vladislav A. Smirnov, "High-pressure investigations of conducting materials", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284646; https://doi.org/10.1117/12.284646
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