High-pressure investigations of conducting materials

Vladimir V. Shchennikov; Andrew Yu. Derevskov; Vladislav A. Smirnov

doi:10.1117/12.284646

25 August 1997 High-pressure investigations of conducting materials

Vladimir V. Shchennikov; Andrew Yu. Derevskov; Vladislav A. Smirnov

Author Affiliations +

Proceedings Volume 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III; (1997) https://doi.org/10.1117/12.284646
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

The diamond-plungers apparatus for simultaneous measurements of resistance (rho) , thermoelectric power S, volume V of samples is described. The apparatus contains the microcontroller for the operation by the measurements and keeping the experimental data. The examples, comprised S, (rho) , V recording for semiconductors Ge, Si and HgTeS in pressure range 0 - 30 GPa are represented.

Citation Download Citation

Vladimir V. Shchennikov, Vladimir V. Shchennikov, Andrew Yu. Derevskov, Andrew Yu. Derevskov, Vladislav A. Smirnov, Vladislav A. Smirnov, } "High-pressure investigations of conducting materials", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284646; https://doi.org/10.1117/12.284646

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