Paper
25 August 1997 Implementation of in-situ particle monitor to improve process condition prediction
Prashant A. Aji, Gerard Petit, Stephanie Tua, Jacques Lavastre
Author Affiliations +
Abstract
This paper investigates the use of in situ particle monitors as a means of yield enhancement and wafer cost reduction, for a fab which has upgraded its tool set and technology during the previous two years. As the new technologies were introduced and we reached the entitlement of the available tool set we found that 50% of the yield limiting causes were directly attributed to particles introduced during process. We describe here two ISPM projects with AMAT 8330 and MRC Eclipse. We discuss the baseline established during normal operation for AMAT 8330, comparing it with traditional methods of particle measurement, the particle trending between wet cleans, in order to establish the effectiveness of these cleans. With the ISPM it was possible to identify the most contaminating processes and correlate the yield loss when particle amount was high. Using the ISPM we identified the influence of the type of wet cleans as well as of the process pumping steps and showed that yield could be improved if the ISPM counts were reduced. A similar exercise done with the MRC eclipse did not give us any significant correlation with our present monitors and so the project was stopped for lack of usefulness of the ISPM monitor.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Prashant A. Aji, Gerard Petit, Stephanie Tua, and Jacques Lavastre "Implementation of in-situ particle monitor to improve process condition prediction", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); https://doi.org/10.1117/12.284642
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KEYWORDS
Particles

Sensors

Semiconducting wafers

Etching

Metals

Contamination

Polymers

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