Verifying and preventing recurrence in metal defects for VLSI manufacturing

Hsun-Peng Lin; Chih-Hsiung Lee; Yi-Chuan Lo; Chi-Horng Liao; Kuo-Liang Lu

doi:10.1117/12.284649

25 August 1997 Verifying and preventing recurrence in metal defects for VLSI manufacturing

Hsun-Peng Lin, Chih-Hsiung Lee, Yi-Chuan Lo, Chi-Horng Liao, Kuo-Liang Lu

Proceedings Volume 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III; (1997) https://doi.org/10.1117/12.284649
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

This paper provides several guides for solving or reducing metal defect from sputter stage, photo stage and etch stage. Particles from three stages were detected with KLA inspection and EDX component analysis tool. According to all evidence, the final results point out the criteria of various type defects in this paper. Specially, in our experiment, we get some obvious results, such as solving the resist gel mechanism in TEL coating track; reducing the splashing particle defect in TEL developer track; reducing particle for the new cleaning method in etching machine (dry 8330); reducing particle during the wafer transferring from ADI (photo) to AEI (etch).

Citation Download Citation

Hsun-Peng Lin, Chih-Hsiung Lee, Yi-Chuan Lo, Chi-Horng Liao, and Kuo-Liang Lu "Verifying and preventing recurrence in metal defects for VLSI manufacturing", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); https://doi.org/10.1117/12.284649

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