5 September 1997 Electroless Cu and barrier layers for subhalf-micron multilevel interconnects
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Abstract
Characteristics of electroless Cu, Co and Ni alloys for a multilevel metallization as well as for local interconnects and silicide formations for sub-0.5 micrometers ULSIs are presented. An integration of the electroless Cu and CoWP multilayers in an ULSI damascene process for the quarter-micron Cu interconnects of aspect ratio 4:1 is discussed. The following techniques are involved in this process: conformal electroless deposition of CoWP barrier on the thin sputtered Co seed layer, electroless Cu deposition directly onto CoWP barrier to fill a deep trench or a via, removal of the excess barrier and Cu on the oxide by chemical mechanical polishing, Pd activation of the Cu surface and selective electroless CoWP deposition onto Pd- activated in-laid Cu lines to prevent Cu oxidation and corrosion. The study of the selective electroless NiP deposition on Si for silicide formations for sub-0.25micrometers ULSI technology is also presented.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey D. Lopatin, Sergey D. Lopatin, Yosef Y. Shacham-Diamand, Yosef Y. Shacham-Diamand, Valery M. Dubin, Valery M. Dubin, P. K. Vasudev, P. K. Vasudev, } "Electroless Cu and barrier layers for subhalf-micron multilevel interconnects", Proc. SPIE 3214, Multilevel Interconnect Technology, (5 September 1997); doi: 10.1117/12.284661; https://doi.org/10.1117/12.284661
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