Visit My Account to manage your email alerts.
Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique
Electrical defect density modeling for different technology nodes, process complexity, and critical areas
Cyclic I-V and Q-V: new measurement techniques for monitoring processes and processing-induced damage
Implementation of in-line Fowler-Nordheim testing for tunnel oxide thickness determination in manufacturing
Novel method to calculate the probability of silicon damage of DRAM based on the process control capability
Computer simulation for estimation of dislocation multiplication due to gravitational stress: challenges and opportunities toward slip-free 300-mm-diameter silicon wafers for ultralarge-scale integr