2 September 1997 Cyclic I-V and Q-V: new measurement techniques for monitoring processes and processing-induced damage
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Abstract
A new measurement technique for process monitoring that consists of observing current or charge transients after each voltage step during cyclic voltage sweeps is presented. This technique provides a quick turn-around alternative to monitoring with full-flow CMOS devices since it uses simple ultrathin oxide MOS structures. Analysis of the resulting cyclic I-V and Q-V data provides important physical information about the status of the ultrathin oxide, the interface and the near surface Si region.
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Murat Okandan, Murat Okandan, Stephen J. Fonash, Stephen J. Fonash, James Werking, James Werking, } "Cyclic I-V and Q-V: new measurement techniques for monitoring processes and processing-induced damage", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); doi: 10.1117/12.284670; https://doi.org/10.1117/12.284670
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