Novel method to calculate the probability of silicon damage of DRAM based on the process control capability

Mingchu King; Jen-Chih Leu; Shih-Shiung Chen; Ying-Chen Chao

doi:10.1117/12.284677

2 September 1997 Novel method to calculate the probability of silicon damage of DRAM based on the process control capability

Mingchu King, Jen-Chih Leu, Shih-Shiung Chen, Ying-Chen Chao

Author Affiliations +

Proceedings Volume 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing; (1997) https://doi.org/10.1117/12.284677
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

The method of calculating the defect probability of silicon damage is demonstrated in this paper. The calculated probability is based on the manufacturing capability of lithography and etching process on dimension and overlay control. An useful equation is derived to calculate the defect probability in silicon damage. This method is helpful on determining suitable process control specifications on dimension and overlay for defect reduction and yield improvement.

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Mingchu King, Jen-Chih Leu, Shih-Shiung Chen, and Ying-Chen Chao "Novel method to calculate the probability of silicon damage of DRAM based on the process control capability", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); https://doi.org/10.1117/12.284677

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